Electron Transport in Heterojunction Superlattices

摘要

This is a final report on the research carried out under the ARO contract DAAL03-89-K-0036 (ARO proposal number 26015-PH) from April 15, 1989 to August 31, 1992.It describes briefly three accomplishments in the area of resonant tunneling through double-barrier devices made of GaAs/Al GaAs heterostructures. They include results on: (1) magnetotunneling characteristics, (2) noise characteristics, and (3) resonant tunneling from a two-dimensional electron system into one-dimensional subbands of a quantum wire, realized through a novel growth geometry. jg p.1.