Artificial Nonlinear Dielectrics for THz/subpicosecond Generation

摘要

During the period of the grant the following devices have been developed andexperimental results obtained: (1) Shock wave nonlinear transmission line (NLTL) pulse generators and NLTL grated sampling circuits have been built with 0.48 PS risetimes and 725 GHz bandwidths; (2) Development of 500-100 GHz Schottky collector Heterojunction Bipolar Transistors were pursued, including device design, mask layout, and two generations of devices fabricated. At the time of the contract end, devices with 120 GHz bandwidths were obtained; (3) Active probes (using NLTL technologies) have been constructed for on wafer mm wave network analysis, and measurements demonstrated over a 10-200 GHz bandwidth. The system was then demonstrated with extensive measurements of advanced high speed ICs; (4) Antenna coupled 0.1 micron Mott switching diodes with circuit limited bandwidths beyond S THz were fabricated; (5) Traveling wave resonant tunnel diode pulse generators were designed, fabricated, and tested. These produced transients with 3.8 ps measured risetimes.