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Study of the Materials Properties of LTG (Al) GaAs and its Electronic and Opto-Electronic Device Applications

机译：LTG（al）Gaas的材料特性及其电子和光电器件应用研究

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摘要

GaAs based semiconductors grown at a low temperature (LIG) by MBE have.

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作者
Mishra, U. K.;
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年度 1995
页码
总页数 23
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Low temperature; Electronic equipment; Microelectronics; Temperature; Annealing; Electrooptics; Growth(General); Resistance; Gallium arsenides; Semiconductors; Electron optics;

机译：低温;电子设备;微电子学;温度;退火;电光学;生长（通用）;电阻;砷化镓;半导体;电子光学;

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1. Self-organize growth of In(Ga) As/GaAs quantum dots and their opto-electronic device applications [J] . P.Bhattacharya, K.Kamath Bulletin of Materials Science . 1999,第3期

机译：In（Ga）As / GaAs量子点的自组织生长及其光电器件应用
2. Electronic band structure and optical properties of GaAsSb/GaAs for optoelectronic device applications: A 14 band k.p study [J] . Sharma Arvind, Das T. D. Optical Materials . 2021,第Feba期

机译：用于光电器件应用的Gaassb / GaAs的电子带结构和光学性能：14频段K.P研究
3. GaAs/AlGaAs inversion channel devices for an integrated opto-electronic technology [J] . Taylor G.W., Crawford D.L. IEEE Transactions on Electron Devices . 1988,第12期

机译：用于集成光电技术的GaAs / AlGaAs倒置通道器件
4. A critical ocmparison between MOVPE and MBE growth of III-V nitride semiconductor materials for opto-electronic device applications [C] . M.A.L.Johnson, Z.Yu, J.D.Brown, Symposium on GaN and related alloys . 1999

机译：光电器件中III-V族氮化物半导体材料的MOVPE和MBE生长之间的关键比较
5. Investigation of organic opto-electronic semiconducting devices: Anode surface etching, application into novel integrated structures, and the analysis of photocurrent properties in photovoltaics. [D] . Simmonds, Adam Gray. 2009

机译：有机光电半导体器件的研究：阳极表面蚀刻，在新颖的集成结构中的应用以及对光电器件中光电流特性的分析。
6. Electronic structure data at ground and excited state of the structural and opto-electronic properties of organic photovoltaic materials [O] . Cornelio Delesma, Carlos Amador-Bedolla, Miguel Robles, 2021

机译：有机光伏材料结构和光电性质的地面和激励状态的电子结构数据
7. A Critical Comparison Between MOVPE and MBE Growth of III-V Nitride Semiconductor Materials for Opto-Electronic Device Applications [O] . M.A.L. Johnson, Zhonghai Yu, J.D. Brown, 1999

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Study of the Materials Properties of LTG (Al) GaAs and its Electronic and Opto-Electronic Device Applications

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