LEC Geowth of Bulk In(x)Ga(1-x)As

摘要

A Double Crucible Liquid Encapsulated Czochralski (DCLEC) process was developedfor the growth of single crystals of InxGa1-xAs. The conditions for the flow of non-wetting liquids through capillaries were determined and applied to hot pressed boron nitride crucibles to achieve stable flow of InGaAs melts, wothout back-diffusion of In, and without interference from the boric oxide encapsulant. The problem of mixing int the inner crucible was solved by the use of super-cooled melts to obtain fine grained, uniform composition pre-cast charges. Growth of In(X)Ga(1-X)As with x values up to 0.035 was achieved. This material was semi-insulating.