New Diamond Emitter Device

摘要

The goal of the program is to produce and evaluate more efficient emitters usingdiamond semiconductor technology; and to propose use of electronic diamond technology in a phase II EBS (Electron Beam Semiconductor) device application. Accordingly, several samples of the rugged, type 6H SiC, high voltage EBS diode targets were obtained from Cree research. The SiC p-n junction diodes (20X2O mils) were evaluated on the PTS tektronix 576 curve tracer (fig. 11) and deemed suitable for use as reverse biased targets for the potential Phase II EBS device. These SiC devices have the potential to be more suitable as EBS targets than the Si diodes previously used. However, the small size will require paralleling until Cree can develop larger, defect free SiC crystals.