Development of Ultra-Low Dark Current, High Performance III-V Quantum WellInfrared Photodetectors (QWIPs) for Focal Plane Arrays Staring Imaging Sensor Systems

摘要

This final report presents the research findings and accomplishments made on theresearch project sponsored by ARPA/ONR under grant No. N00014-91-J-1976 for the period of 08/01/91 to 02/01/95. Specific achievements include: (1) development of the first bound-to-miniband (BTM) transition GaAs/GaA1As QWIP for 8-12 micrometers detection; large area (128/128, 256x256, and 512x512) FPAs based on the BTM QWIP structure have been demonstrated by Martin Marietta with excellent imagery, (2) development of a normal incidence type-II AlAs/AlGaAs QWIP grown on (110) GaAs substrate for multi-color detection in the 3-5 and 8-14 micrometers spectral windows, (3) design of 2-D metal grating couplers for efficient coupling of normal incidence IR radiation in n-type QWIPs, and (4) development of two new normal incidence p-type strained-layer III-V QWIPs for 3-5 and 8-12 micrometers detection. An ultra-low dark current p-type tensile strained-layer (PTSL) In(0.3)Ga(0.7)As/ In(0.52)Al(0.52)A1(0.48) As QWIP grown on InP by MBE for 8-12 micrometers detection has been developed with BLIP condition for T<100 K. The BLIP detectivity for this PTSL-QWIP was found to be 5.9x10(exp 10) Jones at 8.1 micrometers, Vb = 2V, and T = 77K. A new p-type compressive strained-layer (PCSL) In(0.4)Ga(0.6)As/GaAs QWIP grown on GaAs substrate for 3-5 and 8-14 micrometers was demonstrated for the first time. Detectivity for this PCSL-QWIP was found to be 4.0x10(exp 9) Jones at 8.9 um, Vb=0.3 V and T = 75 K. (jg).