Plasma-Deposited Silylation Resist for 193 nm Lithography

摘要

Plasma deposited carbon based polymer films are examined for use as an all drypositive tone photoresist for 193 nm lithography. These films are designed to crosslink upon exposure to 193 nm radiation, enabling selective silicon uptake via reaction of silylamine gas with hydroxyl in the film. After oxygen plasma pattern transfer, features with resolution below 0.50 micrometer have been obtained with a 0.35 numerical aperture projection system.