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首页> 外文期刊>Physica, E. Low-dimensional systems & nanostructures >Controlled growth of oriented amorphous silicon nanowires via a solid-liquid-solid (SLS) mechanism
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Controlled growth of oriented amorphous silicon nanowires via a solid-liquid-solid (SLS) mechanism

机译:通过固液固(SLS)机制控制取向非晶硅纳米线的生长

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摘要

Highly oriented amorphous silicon nanowires (a-SiNWs) were grown on Si (111). The length and diameter of oriented SiNWs are almost uniform, which are 1 mum and 25 nm, respectively. Different from the well-known vapor-liquid-solid (VLS) for conventional whisker growth, it was found that growth of the a-SiNWs was controlled by a solid-liquid-solid mechanism (SLS). This synthesis method is simple and controllable. It may be useful in large-scale synthesis of various nanowires. (C) 2001 Elsevier Science B.V. All rights reserved. [References: 12]
机译:高取向非晶硅纳米线(a-SiNWs)在Si(111)上生长。取向的SiNW的长度和直径几乎是均匀的,分别为1μm和25nm。与用于常规晶须生长的众所周知的气-液-固(VLS)不同,发现a-SiNW的生长受固-液-固机理(SLS)控制。该合成方法简单且可控。在各种纳米线的大规模合成中可能有用。 (C)2001 Elsevier Science B.V.保留所有权利。 [参考:12]

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