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首页> 外文期刊>Physica, E. Low-dimensional systems & nanostructures >Ternary mixed crystal effects on interface optical phonon and electron-phonon coupling in zinc-blende GaN/AlxGa1-xN spherical quantum dots
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Ternary mixed crystal effects on interface optical phonon and electron-phonon coupling in zinc-blende GaN/AlxGa1-xN spherical quantum dots

机译:三元混合晶体对闪锌矿GaN / AlxGa1-xN球形量子点中界面光子和电子-声子耦合的影响

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The theoretical investigations of the interface optical phonons, electron-phonon couplings and its ternary mixed effects in zinc-blende spherical quantum dots are obtained by using the dielectric continuum model and modified random-element isodisplacement model. The features of dispersion curves, electron-phonon coupling strengths, and its ternary mixed effects for interface optical phonons in a single zinc-blende GaN/AlxGa1-xN spherical quantum dot are calculated and discussed in detail. The numerical results show that there are three branches of interface optical phonons. One branch exists in low frequency region; another two branches exist in high frequency region. The interface optical phonons with small quantum number I have more important contributions to the electron-phonon interactions. It is also found that ternary mixed effects have important influences on the interface optical phonon properties in a single zinc-blende GaN/AlxGa1-xN quantum dot With the increase of Al component, the interface optical phonon frequencies appear linear changes, and the electron-phonon coupling strengths appear non-linear changes in high frequency region. But in low frequency region, the frequencies appear non-linear changes, and the electron-phonon coupling strengths appear linear changes. (C) 2015 Elsevier B.V. All rights reserved.
机译:利用介电连续谱模型和改进的随机元素等位置换模型,对界面光子,电子-声子耦合及其在锌共混物球形量子点中的三元混合效应进行了理论研究。计算并讨论了单个Zn-Blende GaN / AlxGa1-xN球形量子点中色散曲线,电子-声子耦合强度及其对界面光子的三元混合效应的特征。数值结果表明,界面光子存在三个分支。低频区域中存在一个分支。另外两个分支存在于高频区域。小量子数I的界面光子对电子-声子的相互作用具有重要的贡献。还发现三元混合效应对单锌共混GaN / AlxGa1-xN量子点中的界面光学声子性能具有重要影响。随着Al组分的增加,界面光学声子频率呈现线性变化,电子-声子耦合强度在高频区域出现非线性变化。但是在低频区域,频率呈现非线性变化,而电子-声子耦合强度呈现线性变化。 (C)2015 Elsevier B.V.保留所有权利。

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