Observation of the vortex-glass transition in the low-temperature high-field regime in thick a-MoxSi1-x films

摘要

We present measurements of dc and ac complex resistivities for thick amorphous (a-)MoxSi1-x films at low temperatures (T > 0.04 K) in various fields B. The critical behavior associated with the vortex-glass transition (VGT) has been observed for both dc and ac resistivities. The VGT persists down to low enough temperatures T < 0.1 K and up to high fields B similar to 0.9B(C2)(0), where B-C2(0) is the upper critical field at T = 0. In the limit of zero temperature the VGT line B-g(T) extrapolates to a value below B-C2(0), indicative of the presence of a T = 0 quantum liquid phase in the regime B-g(0) < B < B-C2(0). (C) 2001 Elsevier Science B.V. All rights reserved. [References: 16]