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Pseudogap features of intrinsic tunneling in Bi2212 single crystals

机译:Bi2212单晶中本征隧穿的Pseudogap特征

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The c-axis intrinsic tunneling properties of Bi2212 and HgBr2-Bi2212 single crystals have been measured in the temperature range 4.2-250 K. The 7-15-unit-cell-high mesa structures on the surfaces of these single crystals were investigated. Clear superconductor-insulator-superconductor like tunneling curves were observed for current applied in the c-axis direction. The dynamic conductance shows both sharp peaks at the superconducting energy gap (SG), followed by dips and wide maxima at larger voltages. The maxima together with depressed conductance at zero voltage persist in the whole temperature range, illustrating the presence of the pseudogap in the quasiparticle excitation spectra, while the SG peaks decrease in voltage and lose their distinctiveness at T -->T-c The intercalation of Bi2212 with HgBr2 molecules results in a drastic increase of the c-axis lattice constant and resistivity rho (c). Despite this, the overall shape of the rho (c)(T)-dependence and the characteristic temperature T* at which an upturn in the rho (c)(T)-dependence sets in upon cooling do not change. This implies that T* is not affected by coupling between the CuO2 bilayers. (C) 2001 Elsevier Science B.V. All rights reserved. [References: 17]
机译:已在4.2-250 K的温度范围内测量了Bi2212和HgBr2-Bi2212单晶的c轴固有隧穿性能。研究了这些单晶表面上的7-15个单元高台面结构。对于沿c轴方向施加的电流,观察到清晰的超导体-绝缘体-超导体,如隧穿曲线。动态电导在超导能隙(SG)处显示两个尖峰,然后在较大电压下出现骤降和宽最大值。零电压下的最大值和降低的电导在整个温度范围内持续存在,这说明在准粒子激发光谱中存在伪间隙,而SG峰的电压在T-> Tc处降低并失去其独特性。 HgBr2分子导致c轴晶格常数和电阻率rho(c)急剧增加。尽管如此,rho(c)(T)依赖性的总体形状和冷却时rho(c)(T)依赖性升高的特征温度T *不会改变。这意味着T *不受CuO2双层之间耦合的影响。 (C)2001 Elsevier Science B.V.保留所有权利。 [参考:17]

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