Comparative study of transport properties of Bi2Sr2Ca2Cu3O10+delta and Bi2Sr2CaCu2O8+delta single crystals

摘要

The doping dependence of the in-plane resistivity rho (a) (T) and the out-of-plane resistivity rho (c) (T) have been systematically measured for the triple-layered system, Bi2Sr2Ca2Cu3O10+delta (Bi-2223). In comparison with the bilayered system, Bi2Sr2CaCu2O8+delta (Bi-2212), we found in Bi-2223 that the superconducting transition temperature T-c and pseudogap formation temperature T*, below which rho (c) shows a typical upturn, do not change from their optimum values in the overdoped region, even though doping actually proceeds. This result suggests that inequivalent hole doping occurs between the outer and inner planes. In the overdoped region, the carriers are mostly doped in the outer plane and the inner plane remains at an optimum doping level. (C) 2001 Elsevier Science B.V. All rights reserved. [References: 7]