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Fabrication and properties of c-axis Hg-1223 superconducting thin films

机译:c轴Hg-1223超导薄膜的制备及性能

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Both undoped and Re-doped c-axis Hg-1223 superconducting chin films are successfully fabricated on SrTiO3 (100) substrates by using the two-step process which comprises pulsed laser deposition of precursor films and subsequent annealing in mercury-vapor atmosphere. The use of HgO/RexBa2Ca2Cu3Oy (x = 0, 0.1) multilayer precursor films capped with an HgO protective layer is found to be effective to obtain more than 75% phase-pure H-1223 films, while the absence of the protective layer leads to appearance of a substantial amount of impurities phases. Re-doped Hg-1223 films exhibit a T-c (zero) as high as 127.5 K and a slightly lower T-c (zero) of 123 K is observed for undoped Hg-1223 films. Re-doped films also show a high J(c) (transport) at 77 K of 1.5 x 10(6) A/cm(2) in a self-field and 1.2 x 10(5) A/cm(2) under a magnetic field of 1 T parallel to the c-axis. It is demonstrated that the Re-doping improves the superconducting properties, as well as the film morphology. Moreover, the irreversibility field above 77 K evaluated from the resistive transitions of the Re-doped Hg-1223 films is found to be substantially higher than those for undoped Hg-1212 and Tl-1223 thin films. (C) 1998 Published by Elsevier Science B.V. All rights reserved. [References: 23]
机译:通过分两步工艺,包括脉冲激光沉积前体膜并随后在汞蒸气气氛中进行退火,成功地在SrTiO3(100)衬底上制备了未掺杂和重掺杂的c轴Hg-1223超导下巴膜。发现使用覆盖有HgO保护层的HgO / RexBa2Ca2Cu3Oy(x = 0,0.1)多层前驱膜可以有效地获得超过75%的纯H-1223膜,而缺少保护层则会导致出现大量的杂质相。再掺杂的Hg-1223膜的T-c(零)高达127.5 K,未掺杂的Hg-1223膜的T-c(零)略低,为123K。重掺杂的薄膜在自场下在77 K时还显示出高J(c)(传输)1.5 x 10(6)A / cm(2),在下场时显示1.2 x 10(5)A / cm(2)平行于c轴的1 T磁场。结果表明,重掺杂改善了超导性能以及薄膜的形貌。此外,发现从Re-掺杂的Hg-1223膜的电阻转变评估的77 K以上的不可逆场显着高于未掺杂的Hg-1212和Tl-1223薄膜的不可逆场。 (C)1998,Elsevier Science B.V.保留所有权利。 [参考:23]

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