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首页> 外文期刊>Physica, C. Superconductivity and its applications >Development of 500 m-length IBAD-Gd2Zr2O7 film for Y-123 coated conductors
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Development of 500 m-length IBAD-Gd2Zr2O7 film for Y-123 coated conductors

机译:开发用于Y-123涂层导体的500 m长IBAD-Gd2Zr2O7膜

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IBAD-Gd2Zr2O7 (GZO) film was fabricated on polycrystalline Ni-based alloy tape by the IBAD-system with 110 cm X 15 cm ion source. Using long-length faraday-cup-array, effects of argon gas-flows on ion-current densities were investigated. As a result, lower gas-flow leads to higher ion-current density at the substrate in the system. Under the condition of low gas-flow, 10 m (with production speed of 5 m/h), 60 m (3 m/h) and 500 m (5 m/h)-length IBAD-GZO films were fabricated and their in-plane textures were AO = 15 degrees, 13 degrees and 18 degrees, respectively. After that, PLD-CeO2 experiments were performed on the IBAD-GZO substrates with Delta phi = 15 degrees and 13 degrees, and then CeO2 films with Delta phi = 5.5 degrees and 5.7 degrees were achieved with the tape-speed of 5.0 m/h and 10.0 m/h, respectively. (C) 2007 Elsevier B.V. All rights reserved.
机译:IBAD-Gd2Zr2O7(GZO)膜是通过IBAD系统在110 cm X 15 cm离子源下在多晶Ni基合金带上制成的。使用长法拉第杯阵列,研究了氩气流量对离子电流密度的影响。结果,较低的气流导致系统中基板处的离子电流密度较高。在低气流条件下,制造了长度为10 m(生产速度为5 m / h),长度为60 m(3 m / h)和500 m(5 m / h)的IBAD-GZO膜,并且平面纹理分别为AO = 15度,13度和18度。之后,在Delta phi = 15度和13度的IBAD-GZO基板上进行PLD-CeO2实验,然后以5.0 m / h的带速获得Delta phi = 5.5度和5.7度的CeO2薄膜。和10.0 m / h。 (C)2007 Elsevier B.V.保留所有权利。

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