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High-speed test of SFQ-shift register files using PTL wiring

机译:使用PTL接线对SFQ移位寄存器文件进行高速测试

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摘要

We have been developing an SFQ shift register memory, which is one candidate to realize high-throughput and high-density superconductive memories. We have modified our memory architecture in order to adapt it to our SFQ microprocessor, CORE1. The new version of the shift register memory is composed of shift registers with nondestructive readout operation, which have an internal feedback. We have also studied the availability of passive transmission line (PTL) wiring in the memory system at high speed. The tested circuit is a 4-byte shift register file, where four kinds of wiring circuits are used between a decoder and shift registers. We have measured the dependences of the DC bias margin on the operating frequency for all wiring methods, and obtained almost the same dependences, which shows the availability of the PTL wiring in the memory system. We have used the NEC 2.5 kA/cm(2) Nb standard process and the CONNECT cell library. (C) 2004 Elsevier B.V. All rights reserved.
机译:我们一直在开发SFQ移位寄存器存储器,它是实现高通量和高密度超导存储器的一种候选方案。我们已经修改了内存架构,以使其适应我们的SFQ微处理器CORE1。新版本的移位寄存器存储器由具有无损读出操作的移位寄存器组成,这些移位寄存器具有内部反馈。我们还研究了高速存储系统中无源传输线(PTL)布线的可用性。被测试的电路是一个4字节的移位寄存器文件,其中在解码器和移位寄存器之间使用了四种布线电路。我们已经测量了所有接线方法的直流偏置裕度对工作频率的依赖性,并获得了几乎相同的依赖性,这表明了存储系统中PTL接线的可用性。我们已经使用NEC 2.5 kA / cm(2)Nb标准工艺和CONNECT单元库。 (C)2004 Elsevier B.V.保留所有权利。

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