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Drude absorption and electron localization in GaAs/AlGaAs superlattices

机译:GaAs / AlGaAs超晶格中的Drude吸收和电子局部化

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摘要

We have investigated the electron conduction in semiconductor superlattices (SL) by measuring free carrier absorption by far-infrared (FIR) spectroscopy. It is found that the momentum relaxation time, #tau#, is quite anisotropic; #tau# in the SL direction (growth direction), #tau#_(SL), being approximately shorter by a factor of two than that for the in-plane direction, #tau#_(||). Furthermore, suppression of the long-range conductivity in the SL direction has been observed and attributed to the localization due to potential disorder.
机译:我们已经通过测量远红外(FIR)光谱对自由载流子的吸收来研究半导体超晶格(SL)中的电子传导。发现动量弛豫时间#tau#是非常各向异性的。在SL方向(生长方向)上的#tau#大约比平面内方向#tau #_(||)短#tau #_(SL)。此外,已经观察到在SL方向上的长距离电导率的抑制,并且归因于由于潜在的无序引起的局部化。

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