Non-linear carrier dynamics in hot electron vertical cavity surface emitting laser

摘要

The hot electron light emitting and lasing semiconductor heterostructure (HELLISH) vertical cavity surface emitting lasers (VCSELs) are devices that utilise hot carrier transport parallel to the layers of Ga_xAl_(1-x)As p-n junction containing GaAs quantum well(s). The fabrication of these devices is very simple and requires only two top contacts that are diffused throughout the hetero-layers. Light emission is independent of the polarity of the applied bias. In this work we present the experimental results from HELLISH-VCSELs where a single quantum well is placed either on the p-side or the n-side of the junction plane. The doping and other structural parameters are optimized for more efficient injection of hot electron-hole pairs into the well. Experiments are carried out at temperatures between 77 and 300 K.