Isoelectronic doping of AlGaN alloys

摘要

Isoelectronic doping of AlxGa1-xN alloys with arsenic in films grown by molecular beam epitaxy has been investigated. In photoluminescence spectra of these AlxGa1-xN layers, there is a gradual increase of the band gap and a smaller progressive shift of the position of blue emission band to the higher energies as the Al content increases. To explain the change in the energy of the blue band in As-doped AlxGa1-xN alloys a model has been proposed, which predicts the shift in the blue band energy to be equal to the valence band offset from AlGaN to GaN. This prediction is consistent with the experimental results. (C) 2003 WELEY-VCH Verlag GmbH & Co. KGaA, Weinheim. [References: 8]