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Review on carrier multiplication in graphene

机译:石墨烯载流子倍增研究进展

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The remarkable gapless and linear band structure of graphene opens up new carrier relaxation channels bridging the valence and the conduction band. These Auger scattering processes change the number of charge carriers and can give rise to a significant multiplication of optically excited carriers in graphene. This is an ultrafast many-particle phenomenon that is of great interest both for fundamental many-particle physics as well as technological applications. Here, we review the research on carrier multiplication in graphene and Landau-quantized graphene including theoretical modeling and experimental demonstration. Illustration of the electronic band structure of graphene including Auger scattering channels that can lead to a carrier multiplication (CM). Figure adapted from Ref. [2].
机译:石墨烯出色的无间隙和线性能带结构开辟了新的载流子弛豫通道,桥接了价键和导带。这些俄歇散射过程会改变电荷载流子的数量,并可能导致石墨烯中光激发载流子的大量繁殖。这是一种超快的多粒子现象,对于基本的多粒子物理以及技术应用都非常感兴趣。在此,我们回顾了石墨烯和Landau量化石墨烯中载流子增殖的研究,包括理论建模和实验论证。石墨烯电子能带结构的图示,包括可能导致载流子倍增(CM)的俄歇散射通道。该图改编自参考文献。 [2]。

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