Computational optical band gap bowing of III-V semiconductors alloys

Ferhat M

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Computational optical band gap bowing of III-V semiconductors alloys

机译：III-V半导体合金的计算光学带隙弯曲

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A phenomenological model is described for the calculations of the optical band bowing of III-V semiconductor alloys. The optical band gap bowing is shown to account successfully for theoretical calculations and the experimental data. (C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

机译：描述了一种现象学模型，用于计算III-V半导体合金的光学带弯曲。光学带隙弯曲被成功地说明了理论计算和实验数据。（C）2004 WILEY-VCH Verlag GmbH＆Co. KGaA，Weinheim。

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《Physica status solidi, B. Basic research》 |2004年第10期|共4页
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Ferhat M;
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正文语种 eng
中图分类固体物理学;
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VAPOR-PHASE EPITAXY; ELECTRONIC-STRUCTURE; ENERGY; PARAMETERS; DEPENDENCE; ALXGA1-XAS; FILMS;

机译：汽相外延;电子结构;能量;参数;依赖性;ALXGA1-XAS;薄膜;

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专利

1. Computational optical band gap bowing of III-V semiconductors alloys [J] . Ferhat M Physica status solidi, B. Basic research . 2004,第10期

机译：III-V半导体合金的计算光学带隙弯曲
2. Quasiparticle self-consistent GW theory of III-V nitride semiconductors: Bands, gap bowing, and effective masses [J] . A. Svane, rnN. E. Christensen, rnI. Gorczyca, Physical review . 2010,第11期

机译：III-V型氮化物半导体的准粒子自洽GW理论：能带，能隙弯曲和有效质量
3. Band-gap bowing and p-type doping of (Zn, Mg, Be)O wide-gap semiconductor alloys: a first-principles study [J] . Shi HL, Duan Y The European physical journal, B. Condensed matter physics . 2008,第4期

机译：（Zn，Mg，Be）O宽禁带半导体合金的带隙弯曲和p型掺杂：第一性原理研究
4. Investigation of band gaps and bowing parameters for zincblende Ⅲ-nitride ternary alloys [C] . Bo-Ting Liou, Sheng-Horng Yen, Yen-Kuang Kuo Gallium Nitride Materials and Devices . 2006

机译：闪锌矿Ⅲ型氮化物三元合金的带隙和弯曲参数的研究
5. Synthesis of narrow band-gap III-V semiconductors using metal-organic vapor phase epitaxy. [D] . Jha, Smita. 2010

机译：利用金属有机气相外延合成窄带隙III-V族半导体。
6. Giant bowing of the band gap and spin-orbit splitting energy in GaP1−xBix dilute bismide alloys [O] . Zoe L. Bushell, Christopher A. Broderick, Lukas Nattermann, -1

机译：GaP1-xBix稀铋化物合金中的带隙和自旋轨道分裂能的巨大弯曲
7. Band-gap bowing and p-type doping of (Zn, Mg, Be)O wide-gap semiconductor alloys: a first-principles study [O] . Shi, Hongliang, Duan, Yifeng 2009

机译：带隙弯曲和p型掺杂（Zn，mg，Be）O宽间隙半导体合金：第一原理研究
8. Study of the Preparation of III-V Alloy Semiconductors with Controlled Band Gaps [R] . Manasevit, H. M., Simpson, W. I., Ruth, R. P. 1971

机译：可控带隙III-V合金半导体的制备研究

Computational optical band gap bowing of III-V semiconductors alloys

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