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An electrical insulator turns metallic within a femtosecond

机译:电绝缘体在飞秒内变成金属

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摘要

State-of-the-art FETs can process electrical signals at rates of about 100 GHz. They can't get much faster than that because of capacitance introduced by electrodes and resistance from the scattering among charge carriers and phonons. But it's also possible to drive carriers ballistically, and all-optical methods for injecting current- no electrodes required-into semiconductors have led to electrical switching on picosecond time scales. Indeed, coherent oscillations of electrons driven by an external electric field were observed in superlattices 20 years ago (see the article by Emilio Mendez and Gerald Bastard in PHYSICS TODAY, June 1993, page 34), though only recently has the capability been extended to bulk semiconductors driven by terahertz pulses.
机译:最先进的FET可以约100 GHz的速率处理电信号。由于电极引入的电容以及电荷载流子和声子之间的散射所引起的电阻,因此它们无法获得比其快得多的速度。但是也有可能弹道驱动载流子,并且将电流注入(不需要电极)到半导体中的全光学方法导致皮秒级的电切换。确实,在20年前的超晶格中观察到了由外部电场驱动的电子的相干振荡(请参阅Emilio Mendez和Gerald Bastard在1993年6月的《今日物理学》中的文章,第34页),尽管这种能力直到最近才扩展到大容量。太赫兹脉冲驱动的半导体。

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