Properties of zinc acceptor and exciton bound to zinc in ammonothermal GaN

摘要

Time-resolved photoluminescence (TRPL) and electron paramagnetic resonance (EPR) studies of Zn acceptor in GaN are presented. The EPR measurements revealed a strong line, which was ascribed to either an isolated Zn acceptor or to a complex defect involving Zn. Two photoluminescence lines were analyzed: the well-known line of exciton bound to Mg acceptor, A(Mg)X at 3.467 eV (8 K), and a new line that was ascribed to exciton bound to Zn acceptor, A(Zn)X at 3.456 eV. The radiative decay time of the A(Zn)X was about 1.4 ns, which was longer than that of the A(Mg)X line. The longer radiative lifetime suggested a smaller radius of the A(Zn)X wave function. [References: 11]