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首页> 外文期刊>Physica status solidi, B. Basic research >Electronic band structure studies of anatase TiO2 thin films modified with Ag, Au, or ZrO2 nanophases
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Electronic band structure studies of anatase TiO2 thin films modified with Ag, Au, or ZrO2 nanophases

机译:Ag,Au或ZrO2纳米相修饰的锐钛矿型TiO2薄膜的电子能带结构研究

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摘要

In this work we studied electronic structure of sol-gel grown anatase thin films modified with gold, silver, and zirconia. Surface photovoltage spectroscopy and photoluminescence spectroscopy were employed to obtain band diagrams of TiO2, TiO2/Au, TiO2/Ag, and TiO2/ZrO2 thin films. Our results showed presence of energy levels at similar to 2.2, similar to 2.3-2.4, and similar to 2.7-2.9 eV above the top of the valence band, common in all the films. Most of these states are related to oxygen deficiency. Addition of Ag results in noticeable changes in the electronic structure and, in particular, appearance of an energy level at similar to 1.8 eV, apparently associated with Ag doping. Addition of Au did not result in significant changes in electronic states and no Au-related gap states were detected. Zirconia addition resulted in an increased number of the native defect-related states whereas no Zr-related states were observed. These results are discussed in relation to the photocatalytic activity of the studied materials and the role of defect states. (C) 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
机译:在这项工作中,我们研究了用金,银和氧化锆改性的溶胶凝胶生长的锐钛矿薄膜的电子结构。利用表面光电压光谱和光致发光光谱获得了TiO2,TiO2 / Au,TiO2 / Ag和TiO2 / ZrO2薄膜的能带图。我们的结果表明,在所有薄膜中均存在高于价带顶部的能量水平,该能量水平类似于2.2,近似2.3-2.4和近似2.7-2.9 eV。这些状态大多数与缺氧有关。 Ag的添加导致电子结构的显着变化,特别是出现了类似于1.8 eV的能级,显然与Ag掺杂有关。添加Au不会导致电子状态发生明显变化,并且未检测到与Au有关的间隙状态。氧化锆的添加导致天然缺陷相关状态的数量增加,而未观察到Zr相关状态。讨论了有关研究材料的光催化活性和缺陷状态的作用的这些结果。 (C)2016 WILEY-VCH Verlag GmbH&Co.KGaA,魏因海姆

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