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首页> 外文期刊>Physica status solidi, B. Basic research >Preparation and properties of negative thermal expansion zirconium tungstate thin films deposited by radio frequency magnetron sputtering
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Preparation and properties of negative thermal expansion zirconium tungstate thin films deposited by radio frequency magnetron sputtering

机译:射频磁控溅射沉积负热膨胀钨酸锆薄膜的制备及性能

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摘要

Zirconium tungstate (ZrW2O8) thin films were deposited on quartz substrates by radio frequency magnetron sputtering followed by annealing at various temperatures. The effects of post-deposition annealing temperature on the phase, morphology and negative thermal expansion properties of the ZrW2O8 thin films were investigated. X-ray diffraction data confirmed that the as-deposited ZrW2O8 films were amorphous, and crystalline ZrW2O8 films could be obtained at high annealing temperature. Trigonal ZrW2O8 films could be prepared at 740 degrees C and cubic ZrW2O8 films could be prepared at 1200 degrees C. The surface morphologies of the ZrW2O8 thin films were evaluated using scanning electron microscopy. The results indicated that amorphous ZrW2O8 films were uniform and dense, and the grain size of the crystalline ZrW2O8 films became larger with increasing annealing temperature. The resulting cubic ZrW2O8 films showed negative thermal expansion, the average value of thermal expansion coefficient being -8.18 x 10(-6) K-1 in the temperature range 15-700 degrees C. (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
机译:钨酸锆(ZrW2O8)薄膜通过射频磁控溅射在石英基板上沉积,然后在不同温度下退火。研究了沉积后退火温度对ZrW2O8薄膜的相,形貌和负热膨胀性能的影响。 X射线衍射数据证实,所沉积的ZrW2O8膜是非晶的,并且可以在高退火温度下获得结晶的ZrW2O8膜。可以在740℃下制备三角ZrW2O8膜,并且可以在1200℃下制备立方ZrW2O8膜。使用扫描电子显微镜评价ZrW2O8薄膜的表面形态。结果表明,非晶ZrW2O8薄膜均匀致密,且随着退火温度的升高,晶体ZrW2O8薄膜的晶粒尺寸增大。所得的立方ZrW2O8薄膜显示负热膨胀,在15-700摄氏度的温度范围内,热膨胀系数的平均值为-8.18 x 10(-6)K-1。(C)2008 WILEY-VCH Verlag GmbH&Co魏因海姆(Kain)

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