STUDIES OF PHONON-ASSISTED TUNNELLING IN A DELTA-DOPED DOUBLE BARRIER RESONANT TUNNELLING DEVICE

摘要

We report measurements of the change in current induced by non-equilibrium phonons in a delta-doped double barrier resonant structure. In addition to the anti-Stokes and Stokes peaks resulting from tunnelling through the ground state of Si donors present in the well, two further peaks, C and D, are observed in magnetic fields >5 T. Peak D is attributed to phonon-assisted tunnelling between two Landau levels, while C may be attributable to heating effects. [References: 10]