The non-ohmic hopping conductivities of a large number of samples of lightly doped by various impurities (P, As, Sb, B and Ga) and weakly compensated nand p-type Si were investigated. The current-voltage (I-TI) characteristics appeared to be different in two temperature regions typical for the studies of Ohmic hopping conductivity: the low-temperature hopping conductivity region with a constant activation energy epsilon (3) (the epsilon (3) region) and the relatively high-temperature hopping conductivity saturation region (the s region). In the epsilon (3) region the conductivity increases with increasing field owing to a Poole-Frenkel-like lowering of the activation energy. In the s region the conductivity decreases with increasing field and shows a negative differential conductance (low-frequency current oscillations have been observed) according to Aladashvili et al. (1988. JETP Lett.. 47, 390) as predicted by Nguyen and Shklovskii. It is shown that low-frequency current oscillations are associated with 'hopping' domain periodic formation and travel in the bulk of the sample; the hopping domain is of triangular shape parallel to the external field, with equal leading and back edges. Estimates give the velocity c = 0.25 cm s(-1), the domain width d = 150 mum and the average field E = 300 V cm(-1), The mobility of the hopping carriers is measured. [References: 21]
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机译：研究了大量轻掺杂各种杂质（P，As，Sb，B和Ga）以及弱补偿的n和p型Si的样品的非欧姆跳跃电导率。在研究欧姆跳跃电导率的两个典型温度区域中，电流-电压（I-TI）特性似乎有所不同：具有恒定活化能epsilon（3）的低温跳跃电导率区域（epsilon（3）区域） ）和相对高温的跳变电导率饱和区域（s区域）。在ε（3）区域，电导率由于激活能的类似于Poole-Frenkel的降低而随电场的增加而增加。根据Aladashvili等人的研究，在s区域，电导率随电场的增加而降低，并显示出负的差动电导（已观察到低频电流振荡）。 （1988. JETP Lett .. 47，390）由Nguyen和Shklovskii预测。结果表明，低频电流振荡与“跳跃”域的周期性形成和样品的大部分传播有关。跳跃域是平行于外部场的三角形，前边缘和后边缘相等。估计给出速度c = 0.25 cm s（-1），畴宽d = 150 mum，平均场E = 300 V cm（-1），测量了跳跃载流子的迁移率。 [参考：21]
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