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Abnormally high residual dislocation density in pure aluminum after Al/Ti/Al laminate annealing for seven days

机译:Al / Ti / Al层压板退火7天后纯铝中异常高的残余位错密度

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We report an abnormally high residual dislocation density in aluminium in an Al/Ti/Al laminate annealed at 873K for seven days. The residual dislocation density reaches 7.5x10(14)m(-2), higher than that in aluminum after severe plastic deformation processes such as accumulative roll bonding and high-pressure torsion. It is proposed that the high residual dislocation density may result from obstruction of the movement of TiAl3 nanoparticles by the grain boundary and Ti atoms conglomerating at vacancies distributed in the aluminium matrix at a high temperature for a sufficient time to allow a relatively stable crystal.
机译:我们报告了在873K退火7天的Al / Ti / Al层压板中铝中异常高的残余位错密度。残余的位错密度达到7.5x10(14)m(-2),高于铝在经过严重的塑性变形过程(例如累积的辊压粘结和高压扭转)后的位错密度。提出高的残余位错密度可能是由于晶界和Ti原子在高温下以足够的时间聚集在铝基体中分布的空位而团聚而阻塞TiAl3纳米粒子的运动所导致的,该时间足够长以允许相对稳定的晶体。

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