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Ga-As (808 nm) laser irradiation enhances ATP production in human neuronal cells in culture.

机译:Ga-As(808 nm)激光照射可增强培养的人类神经元细胞中的ATP产生。

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OBJECTIVE: The aim of the present study was to investigate whether Ga-As laser irradiation can enhance adenosine triphosphate (ATP) production in normal human neural progenitor (NHNP) cells in culture. METHODS: NHNP were grown in tissue culture and were treated by Ga-As laser (808 nm, 50 mW/cm(2), 0.05 J/cm(2)), and ATP was determined at 10 min after laser application. RESULTS: The quantity of ATP in laser-treated cells was 7513 +/- 970 units, which was significantly higher (p < 0.05) than the non-treated cells, which comprised 3808 +/- 539 ATP units. CONCLUSION: Laser application to NHNP cells significantly increases ATP production in these cells. These findings may explain the beneficial effects of low-level laser therapy (LLLT) in stroked rats. Tissue culture of NHNP cells might offer a good model to study the mechanisms associated with promotion of ATP production in the nervous system by LLLT.
机译:目的:本研究的目的是研究Ga-As激光照射能否增强培养物中正常人神经祖细胞(NHNP)细胞中三磷酸腺苷(ATP)的产生。方法:NHNP在组织培养物中生长,并用Ga-As激光(808 nm,50 mW / cm(2),0.05 J / cm(2))处理,并在施加激光后10分钟确定ATP。结果:激光处理的细胞中ATP的量为7513 +/- 970单位,比未处理的包含3808 +/- 539 ATP的细胞中的ATP含量显着更高(p <0.05)。结论:激光施用于NHNP细胞可显着增加这些细胞中ATP的产生。这些发现可能解释了低剂量激光治疗(LLLT)对中风大鼠的有益作用。 NHNP细胞的组织培养可能为研究与LLLT促进神经系统中ATP产生相关的机制提供一个很好的模型。

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