Structural transformation of the (233)[011], ∑= 11 tilt grain boundaries in germanium and silicon

Mohamed Elkajbaji; Jany Thibault; Helmut O. K. Kirchner

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Structural transformation of the (233)[011], ∑= 11 tilt grain boundaries in germanium and silicon

机译：（233）[011]，∑ = 11锗和硅中倾斜晶界的结构转变

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In a previous paper, observations of the high-temperature and the low temperature phases of the (233)[011], Sigma= 11 symmetrical tilt grain boundary (GB) in silicon at 1470K (Sigma=11B) and 1220K (Sigma=11A) after deformation of a (122)[011],Sigma=9 GB were reported by Putaux and Thibault-Desseaux. The present letter describes the direct transformation of the (233)[011],Sigma=11 GB in a Sigma=11 germanium bicrystal. Silicon and germanium give contradictory results.

机译：在以前的论文中，观察到（233） [011]，Sigma = 11对称倾斜晶界（GB）在1470K（Sigma = 11B）和1220K（Sigma = （11A）在（122）[011]变形后，Putaux和Thibault-Desseaux报道了Sigma ＝ 9GB。本信描述了（233）[011]，Sigma = 11 GB在Sigma = 11锗双晶中的直接转化。硅和锗产生矛盾的结果。

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《Philosophical Magazine Letters》 |1996年第1期|共6页
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Mohamed Elkajbaji; Jany Thibault; Helmut O. K. Kirchner;
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专利

1. Structural transformation of the (233)[011], ∑= 11 tilt grain boundaries in germanium and silicon [J] . Mohamed Elkajbaji, Jany Thibault, Helmut O. K. Kirchner Philosophical Magazine Letters . 1996,第1期

机译：（233）[011]，∑ = 11锗和硅中倾斜晶界的结构转变
2. Potential energy of two structures of Σ = 11<0 1 1> tilt grain boundary in silicon and germanium with empirical potentials and tight-binding methods [J] . J. Chen, B. Lebouvier, A. Hairie, Computational Materials Science . 1998,第1a4期

机译：具有经验势和紧密结合方法的硅和锗中Σ= 11 <0 1 1>倾斜晶界的两种结构的势能
3. The atomic structure of Σ = {144}<011>(θ = 20.05°) tilt grain boundary in germanium [J] . A. Lamzatouar, M. El Kajbaji, A. Charai, Scripta materialia . 2001,第10期

机译：锗中Σ= {144} <011>（θ= 20.05°）倾斜晶界的原子结构
4. Potential energy calculation of two structures of the sum=11 <011> tilt grain boundary in silicon and germanium [C] . J. Chen, A. Hairie, B. Lebouvier, Symposium on microscopic simulation of interfacial phenomena in solids and liquids . 1998

机译：硅和锗中总和= 11 <011>倾斜晶边界的两个结构的势能计算
5. Silicon (011) and silicon germanium (011) gas-source molecular beam epitaxy: Surface reconstructions, growth kinetics, and germanium segregation. [D] . Taylor, Nerissa Sue. 2000

机译：硅（011）和硅锗（011）气源分子束外延：表面重建，生长动力学和锗偏析。
6. Characterization of dislocations in germanium layers grown on (011)- and (111)-oriented silicon by coplanar and noncoplanar X-ray diffraction [O] . Andrei Benediktovitch, Alexei Zhylik, Tatjana Ulyanenkova, -1

机译：通过共面和非共面X射线衍射表征在（011）和（111）取向硅上生长的锗层中的位错
7. ANALYSIS OF STRUCTURES OF SYMMETRICAL 001 TILT GRAIN BOUNDARIES IN SILICON AND GERMANIUM [O] . J.-L. ROUVIERE, A. BOURRET 1990

机译：硅和锗倾斜晶界结构的结构分析
8. High resolution electron microscopy study of the (Sigma)11 (113)/(110) symmetric tilt grain boundary in pure Al and Al-1.5 wt% Cu [R] . Campbell, G. H., King, W. E., Wien, W. L., 1996

机译：高纯度电子显微镜研究（sigma）11（113）/（110）对称倾斜晶界纯al和al-1.5 wt％Cu

Structural transformation of the (233)[011], ∑= 11 tilt grain boundaries in germanium and silicon

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