Observation of twins formed by gliding of successive surface-nucleated partial dislocations in silicon

摘要

A new twin formation mechanism is proposed based on a transmission electron microscopy study of indentation-deformed silicon. It is found that the twins are formed by successive surface nucleation of half-loops and subsequent glide of Shockley partial dislocations on the neighbouring {111} planes. All the partial dislocations in the twin band have the same Burgers vector which points toward the bulk.