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首页> 外文期刊>Chemie-Ingenieur-Technik: Verfahrenstechnik Technische Chemie Apparatewesen Biotechnologie >Crystal Growth Rate Measurements in Pure and Impure Solutions: Single Crystal vs. Crystal Collectives
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Crystal Growth Rate Measurements in Pure and Impure Solutions: Single Crystal vs. Crystal Collectives

机译:在纯溶液和不纯溶液中的晶体生长速率测量:单晶体与晶体集合体

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摘要

Information about crystal growth rates and the influence of impurities are essential for the design of industrial crystallization processes. Here, the influence of trivalent metal ions Fe3+ in solution and adsorbed in the crystal on the growth and dissolution rate is investigated. The results clearly show kinetic and thermodynamic effects caused by impurities which have to be taken into account in the equipment design. Furthermore, effects of growth rate dispersion must be excluded by investigation of crystal collectives. Additionally, the crystal growth data should be obtained from real starting solutions.
机译:有关晶体生长速率和杂质影响的信息对于设计工业结晶过程至关重要。在此,研究了溶液中并吸附在晶体中的三价金属离子Fe3 +对生长和溶解速率的影响。结果清楚地表明了由杂质引起的动力学和热力学效应,必须在设备设计中加以考虑。此外,必须通过研究晶体集合体来排除生长速度分散的影响。此外,晶体生长数据应从真实的起始溶液中获得。

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