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Effect of Cu-Al double substitution on the electrical properties of Bi4V2O11

机译:铜铝双取代对Bi4V2O11电性能的影响

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摘要

Bi2Cu0.1-xAlxV0.9O5.35-x/2-delta, 0.02 <= x <= 0.08, were synthesized by standard solid-state reaction route. Structural and electrical properties of samples are characterized by X-ray diffraction (XRD), differential thermal analysis (DTA), Fourier transform infrared (FT-IR) and alternating current (AC) impedance spectroscopy. The tetragonal gamma ' phase structure is preserved to room temperature with compound x = 0.02. The stabilization of beta orthorhombic phase is observed for compositions 0.04 <= x <= 0.05. As the Al content increases, the monoclinic alpha phase is evidenced for materials 0.06 <= x <= 0.08. The electrical investigation of Bi2Cu0.1-xAlxV0.9O5.35-x/2-delta system has been performed in the frequency range from 20 Hz to 1 MHz using AC impedance spectroscopy. The impedance spectra indicate the two semicircle arcs associated with the bulk and grain boundary resistances at temperature below similar to 450 C-White circle. The conductivity generally changes when Al is substituted. The highest conductivity at 300 C-White circle (sigma = 2.55 x 10(-4) S cm(-1)) is shown for x = 0.02.
机译:通过标准的固态反应路线合成了Bi2Cu0.1-xAlxV0.9O5.35-x /2-δ,0.02 <= x <= 0.08。样品的结构和电学性质通过X射线衍射(XRD),差热分析(​​DTA),傅立叶变换红外(FT-IR)和交流(AC)阻抗谱进行表征。将四方γ′相结构保留至室温,化合物x = 0.02。对于组合物0.04≤x≤0.05观察到β正交晶相的稳定。随着Al含量的增加,材料0.06 <= x <= 0.08证明了单斜晶α相。 Bi2Cu0.1-xAlxV0.9O5.35-x / 2-delta系统的电学研究已使用交流阻抗谱在20 Hz至1 MHz的频率范围内进行。阻抗谱表明在低于类似于450 C-White圆的温度下,与体电阻和晶界电阻相关的两个半圆弧。当取代Al时,电导率通常会改变。对于x = 0.02,显示了在300 C-白色圆圈处的最高电导率(sigma = 2.55 x 10(-4)S cm(-1))。

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