INFLUENCE OF ELECTROPOLYMERIZATION METHOD ON MORPHOLOGIES AND CAPACITIVE PROPERTIES OF POLYPYRROLE FILMS GROWING ON SILICON

摘要

Two methods of Pyrrole electropolymerization were investigated to prepare polypyrrole films growing onto n-doped silicon n-Si (111): Polypyrrole films prepared by galvanostatic method exhibits toroidal morphology for thin films, and mixture of toroidal and globular morphologies for thick films. Polypyrrole films obtained from this method were characterized by lower surface roughness. Electropolymerization of pyrrole by potentiodynamic method provided Polypyrrole films with beans-like structures for both thin and thick films with high surface roughness. Due to their lower surface roughness, polypyrrole films produced by galvanostatic method exhibit high intensities in Raman spectroscopy. These polypyrrole films show better capacitive properties according to discharge test.