SURFACE AND QUALITY MODIFICATION OF DIAMOND-LIKE CARBON FILMS BY CO2 LASER HEATING ASSISTED HOT FILAMENT CHEMICAL VAPOR DEPOSITION

摘要

An infrared CO2 laser was used for regional heating to study the heating effect on hot filament chemical vapor deposition of diamond-like carbon formation on Si(100) face substrates. The substrate surface temperature was about 450-500 degrees C. The power of the laser called low, medium, and high raised the temperature of the substrate locally by 25, 45, and 55 degrees C, respectively. At medium laser power, at the central laser beam region, a narrow Raman peak centered at 1438 cm(-1) was detected. It can be concluded that this region has good-quality DLC. This moderate high-frequency peak corresponds to a fourfold-rotation-symmetry atom in an amorphous carbon network from the tight-binding molecular dynamics simulation of Wang and Ho.