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首页> 外文期刊>Synthetic Metals >DEFECT STATE EMISSION IN ALPHA-SEXITHIOPHENE SINGLE CRYSTAL
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DEFECT STATE EMISSION IN ALPHA-SEXITHIOPHENE SINGLE CRYSTAL

机译:六方六面体单晶体的缺陷态发射

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摘要

The optical emission properties of alpha-sexithiophene single crystal have been studied using photoluminescence (PL), time resolved PL and temperature dependent PL spectroscopy. Contrary to the absorption spectrum the photoluminescence measured on the same sample shows broad and structureless emission with a temperature dependence pointing to thermally activated defect state emission. The temperature dependence of the photoluminescence and the time-resolved photoluminescence measurements support this scenario. [References: 5]
机译:使用光致发光(PL),时间分辨的PL和温度相关的PL光谱研究了α-六氢噻吩单晶的光发射特性。与吸收光谱相反,在同一样品上测得的光致发光显示出宽泛且无结构的发射,其温度依赖性指向热激活的缺陷态发射。光致发光的温度依赖性和时间分辨的光致发光测量结果支持这种情况。 [参考:5]

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