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首页> 外文期刊>Synthetic Metals >The preparation and characteristics of conductive poly(3,4-ethylenedioxythiophene) thin film by vapor-phase polymerization
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The preparation and characteristics of conductive poly(3,4-ethylenedioxythiophene) thin film by vapor-phase polymerization

机译:气相聚合法制备导电聚(3,4-乙撑二氧噻吩)薄膜及其特性

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The conductive thin films of ferric chloride doped poly(3,4-ethylenedioxythiophene) (PEDOT: Fig. 1) were obtained by in situ vapor-pbase polymerization method under ambient conditions. Homogeneous thin conductive PEDOT films were uniformly fabricated at nano-level thickness (20-300nm) on the substrates. The surface resistance of the PEDOT films with 300nm thick was enhanced up to 500 Omega/sq, and the light transmittance were also increased as up to 95% in case of a film below 40 nm thick. The growth of highly ordered conductive PEDOT crystalline microstructure, which high anisotropy, parallel to the substrate film fabricated above 60 degreesC, was observed by atomic force microscopy (AFM). (C) 2003 Elsevier Science B.V. All rights reserved. [References: 23]
机译:氯化铁掺杂的聚(3,4-乙撑二氧噻吩)(PEDOT:图1)的导电薄膜是在环境条件下通过原位气相-碱聚合法获得的。在基板上以纳米级厚度(20-300nm)均匀地制造均匀的导电PEDOT薄膜。 300nm厚的PEDOT膜的表面电阻可以提高到500Ω/ sq,并且在膜厚低于40 nm的情况下,透光率也可以提高到95%。通过原子力显微镜(AFM)观察到,高度各向异性的PEDOT晶体微结构的生长与在60℃以上制造的基底膜平行,具有高各向异性。 (C)2003 Elsevier Science B.V.保留所有权利。 [参考:23]

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