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首页> 外文期刊>Superconductor Science & Technology >Improvement of J_c by cold high pressure densification of binary, 18-filament insitu MgB_2 wires
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Improvement of J_c by cold high pressure densification of binary, 18-filament insitu MgB_2 wires

机译:通过对二元18丝原位MgB_2线进行冷高压致密化来改善J_c

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摘要

Cold high pressure densification (CHPD) has recently been found to be a promising way to improve the critical current density, J_c, in single-core MgB_2 wires prepared by insitu processing. In this work, the CHPD process was also applied to multifilamentary, binary MgB_2 wires, leading again to a strong enhancement of the transport J_c. The fields and where the transport J_c at 4.2K reaches the value 1 × 104Acm- 2 for parallel and perpendicular fields were determined as 8.5 and 8.2T, respectively (0.1 νVcm~(- 1) criterion). The behaviour of J_c versus B at 20 and 25K was almost isotropic, the corresponding values being 4.7 and 3T, respectively. The observed enhancement of J_c by a factor 2.3 at 4.2K at all applied fields up to 10T in densified samples is directly correlated with the observed enhancement of the mass density and microhardness. The decrease of the electrical resistivity of the densified wire reflects improved grain connectivity in the filaments. The improvement of J_c by CHPD was still observed after sequential pressing with overlapping regions, up to a total wire length of 150mm. This result is promising as regards practical applications.
机译:最近发现,冷高压致密化(CHPD)是一种改善通过原位处理制备的单芯MgB_2线的临界电流密度J_c的有前途的方法。在这项工作中,CHPD工艺还应用于多丝的,二进制的MgB_2导线,再次导致了运输J_c的显着增强。对于平行场和垂直场,在4.2K处的电场和传输J_c达到值1×104Acm-2的位置分别确定为8.5T和8.2T(0.1 vVcm〜(-1)准则)。 J_c与B在20和25K下的行为几乎是各向同性的,相应的值分别为4.7和3T。在致密样品中直至10T的所有外加磁场下,在4.2K处观察到的J_c增强系数为2.3 K均与所观察到的质量密度和显微硬度的增强直接相关。致密线电阻率的降低反映了细丝中晶粒的连通性提高。在连续压接重叠区域(总导线长度为150mm)后,​​仍观察到CHPD对J_c的改善。就实际应用而言,该结果是有希望的。

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