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The critical current properties of 37-filament internal Mg diffusion-processed MgB_2 wires

机译:37丝内部Mg扩散处理的MgB_2线的临界电流特性

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摘要

Internal Mg diffusion (IMD)-processed MgB_2 wires are known to have a high-density MgB_2 core, which obviously leads to high critical current density (J_c). In this work, we first fabricated 37-filament MgB_2 wires by IMD processing, and we found that J_c for SiC-added 37-filament IMD-processed MgB_2 wires achieved a value of 7.6 × 10~4 A cm~(-2) at 4.2 K and 10 T, which is higher than those of multi-filament wires with a smaller number of filaments (1 filament, 7 filaments) fabricated under the same conditions. We also investigated the critical current properties of both undoped and SiC-added 37-filament IMD-processed MgB_2 wires under different magnetic fields and temperatures. The undoped 37-filament IMD-processed MgB_2 wires achieved J_c value of 1.6 × 10~5 A cm~(-2) at 20 K and 3 T. The engineering critical current density (J_e) achieved 2.8 × 10~3 A cm~(-2) at 20 K and 3 T. The microstructures observed by scanning electron microscopy support the view that the decrease in unreacted B particles by the short diffusion distance is mainly responsible for the high J_c obtained.
机译:内部Mg扩散(IMD)处理的MgB_2导线已知具有高密度MgB_2芯,这显然导致高临界电流密度(J_c)。在这项工作中,我们首先通过IMD工艺制造了37根MgB_2线,发现添加SiC的37根IMD处理的MgB_2线的J_c达到7.6×10〜4 A cm〜(-2)。 4.2 K和10 T,高于在相同条件下制造的单丝数量较少(1丝,7丝)的多丝线。我们还研究了未掺杂和添加SiC的37丝IMD处理的MgB_2导线在不同磁场和温度下的临界电流特性。未掺杂37根IMD处理的MgB_2导线在20 K和3 T下达到J_c值为1.6×10〜5 A cm〜(-2)。工程临界电流密度(J_e)达到2.8×10〜3 A cm〜 (-2)在20 K和3 T下。通过扫描电子显微镜观察到的微观结构支持这样的观点,即由于扩散距离短,未反应的B粒子的减少是造成高J_c的主要原因。

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