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Enhancement of the critical current density and upper critical field in Zr and Mo co-doped Nb3Sn

机译:Zr和Mo共掺杂Nb3Sn的临界电流密度和上临界场的增强

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摘要

We prepared a series of Nb3-2xZrxMoxSn (0 <= x <= 0.2) samples which have the same number of electrons per cell as Nb3Sn in order to study the doping effect. The formation of the single phase samples was confirmed by x-ray diffraction when x <= 0.1. It was found that the lattice parameters a decrease slightly with the increasing dopant concentration. The grain morphologies of the sample are irregular. As the dopant content increases, the size of the coarse grain decreases and the content of the fine grain increases. The T-c value of the Nb3-2xZrxMoxSn samples drops slowly when x < 0.1, whereas a sharp decline of T-c occurs when x > 0.1. The T-c drop in the co-doped samples is slower than that in the single-doped ones with the same total dopant concentrations, indicating that the N(E-F) plays an important role in the change of T-c. At 4 T and 10 K, the J(c) value of Nb2.8Zr0.1Mo0.1Sn sample reached 3.4 x 10(6) A cm(-2), which is significantly enhanced by more than 400 and 23 times that of the pure Nb3Sn and single-doped Nb2.8Mo0.2Sn samples, respectively. The H-c2(0) values of the co-doped sample are higher than the pure and single-doped sample. The H-c2(0) value of the Nb2.8Zr0.1Mo0.1Sn sample reached 30 T.
机译:为了研究掺杂效应,我们准备了一系列Nb3-2xZrxMoxSn(0 <= x <= 0.2)样品,每个样品中的每个单元的电子数量与Nb3Sn相同。当x <= 0.1时,通过x射线衍射确认单相样品的形成。发现随着掺杂剂浓度的增加,晶格参数α略有降低。样品的晶粒形态是不规则的。随着掺杂剂含量的增加,粗晶粒的尺寸减小,而细晶粒的含量增加。当x <0.1时,Nb3-2xZrxMoxSn样品的T-c值缓慢下降,而当x> 0.1时,T-c急剧下降。共掺杂样品中的T-c下降比总掺杂浓度相同的单掺杂样品中的T-c下降要慢,这表明N(E-F)在T-c的变化中起着重要的作用。在4 T和10 K时,Nb2.8Zr0.1Mo0.1Sn样品的J(c)值达到3.4 x 10(6)A cm(-2),比Jb值显着提高了400倍和23倍。纯Nb3Sn和单掺杂Nb2.8Mo0.2Sn样品。共掺杂样品的H-c2(0)值高于纯和单掺杂样品。 Nb2.8Zr0.1Mo0.1Sn样品的H-c2(0)值达到30 T.

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