YBCO film growth on CeO_2-buffered YSZ substrate by the full-solution method

摘要

The full-solution method has been developed as a low-cost process for making Yba_2Cu_3O-(7-x) (YBCO) coated conductors. In this study, highly biaxially textured CeO_2 buffer layers have been fabricated on yttria-stabilized zirconia (YSZ) single-crystal substrates by the sol-gel method using inorganic cerium nitrate as the starting precursor material. High-quality superconducting YBCO film has also been fabricated on CeO_2 -buffered YSZ substrate by the trifluoroacetate metal-organic deposition (TFA-MOD) method. For YBCO superconducting film, only (00l) diffraction peaks can be detected by x-ray diffraction (XRD) analysis. Also from the XRD analysis, the YBCO films show sharp in-plane and out-of-plane texture for all samples, which indicates that the YBCO film is epitaxially grown on the CeO_2 buffer layer. From scanning electron microscope (SEM) observations, the YBCO film shows a uniform surface structure. A critical transition temperature, T_(c0), of 91 K and a critical current density of 3 MA cm~(-2) (77 K, self-field) were obtained for a 0.2 mu m thick YBCO film on CeO_2-buffered YSZ substrate.