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首页> 外文期刊>Superconductor Science & Technology >Investigation of high J(c)YBa(2)Cu(3)O(7-x) coated conductors prepared by pulsed laser deposition on self-epitaxial CeO2 buffers
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Investigation of high J(c)YBa(2)Cu(3)O(7-x) coated conductors prepared by pulsed laser deposition on self-epitaxial CeO2 buffers

机译:高J(c)YBa(2)Cu(3)O(7-x)涂层导体的研究,该导体是通过在自外延CeO2缓冲液上进行脉冲激光沉积制备的

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摘要

For YBa2Cu3O7-x (YBCO) coated conductors with high J(c), we have been investigating pulsed laser deposition (PLD) processing using the,self-epitaxial' PLD-CeO2 layer on an ion beam assisted deposition (IBAD)-Gd2Zr2O7 (GZO) buffered Hastelloy tape. In this study using short samples of 10 mm in length by 10 mm in width, a high critical current density, Jc, value of 4.4 MA cm(-2) was obtained for a substrate with the delta phi value of 2.4degrees. We also confirmed the relationship that the J(c) value of YBCO increased exponentially with decreasing in-plane grain alignment of YBCO. Furthermore, we also succeeded in deposition of a high J(c) and thick YBCO film; the thickness was 1.2 mum and the J(c) value was 2.3 MA cm(-2). This value corresponds to 276 A/cm-width. Based on these results, a metre long YBCO coated conductor was fabricated using a reel-to-reel system. Consequently, J(c) of I MA cm(-2) was obtained for a long coated conductor. Now, work is in progress to fabricate a longer and thicker YBCO coated conductor with high critical current, I-c.
机译:对于具有高J(c)的YBa2Cu3O7-x(YBCO)涂层导体,我们一直在研究在离子束辅助沉积(IBAD)-Gd2Zr2O7上使用自外延PLD-CeO2层进行脉冲激光沉积(PLD)工艺( GZO)缓冲的Hastelloy磁带。在这项研究中,使用长度为10 mm,宽度为10 mm的短样品,对于δ值为2.4度的基板,获得了4.4 MA cm(-2)的高临界电流密度Jc。我们还证实了以下关系:YBCO的J(c)值与YBCO的面内晶粒排列减少呈指数增加。此外,我们还成功沉积了高J(c)和厚YBCO膜;厚度为1.2毫米,J(c)值为2.3 MA cm(-2)。该值对应于276 A / cm宽度。根据这些结果,使用卷到卷系统制作了米长的YBCO涂层导体。因此,对于长涂层导体,可获得I MA cm(-2)的J(c)。现在,正在进行工作,以制造具有更高临界电流I-c的更长,更厚的YBCO涂层导体。

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