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Effects of Au catalyst on growth of beta-Ga_2O_3 nanostructure at alpha-Al_2O_3 (0001) surface

机译:金催化剂对α-Al_2O_3(0001)表面β-Ga_2O_3纳米结构生长的影响

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On the alpha-Al_2O_3 (0001) surface low-dimensional nanostructure of beta-Ga_2O_3 was synthesized on a large scale (1 cm square) at relatively low substrate temperature (650 deg C) by thermal evaporation of Ga_2O_3 with presence or absence of Au catalyst. Whitish layer over the substrate surface consisted of rod-like or block-like beta-Ga_2O_3 nanostructures with presence or absence of the catalyst, respectively. In growth with the catalyst, a nanosphere with diameter of 200-450 nm placed at the top of each nanorod with diameter of 250-700 nm and approx 4 mum long. In growth without the catalyst, distorted pentagonal nanoblock with longer and shorter sides for a section of 1-1.7 mum long and 300-400 nm long, respectively, reached as long as 5.5 mum. The shape and size of the nanostructure were affected by presence or absence of the catalyst in the deposition of Ga_2O_3. The vapor-liquid-solid growth using Au catalyst increased rather small rod-like nanostructure of beta-Ga_2O_3 promising for nanodevice applications.
机译:在α-Al_2O_3(0001)表面上,通过存在或不存在Au催化剂的情况下,通过Ga_2O_3的热蒸发,在相对较低的衬底温度(650摄氏度)下大规模(1平方厘米)合成了β-Ga_2O_3的低维纳米结构。基底表面上的发白层分别由棒状或块状β-Ga_2O_3纳米结构组成,分别存在或不存在催化剂。在用催化剂生长时,将直径为200-450 nm的纳米球放置在每个纳米棒的顶部,直径为250-700 nm,长约4毫米。在没有催化剂的生长中,畸变的五边形纳米嵌段的长和短边分别为1-1.7微米长和300-400 nm长,截面长达5.5微米。纳米结构的形状和尺寸受Ga_2O_3沉积中催化剂存在与否的影响。使用Au催化剂的气-液-固生长使β-Ga_2O_3的棒状纳米结构增加,有望用于纳米器件。

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