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Synthesis of ternary and quaternary CuIn_xGa_(1-x)Se_2 (0 <= x <= 1) semiconductor nanocrystals

机译:三元和四元CuIn_xGa_(1-x)Se_2(0 <= x <= 1)半导体纳米晶体的合成

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摘要

Semiconducting CuIn_xGa_(1-x)Se_2 nanocrystals (20-30 nm) have been synthesized over the whole composition range using a facile solution-based method. Depending on the synthesis conditions, the nanocrystals exhibit a cubic or spherical morphology with a narrow size distribution. The band gap increases with increasing Ga concentration and the values are close to those observed in the bulk.
机译:使用基于溶液的简便方法,已在整个组成范围内合成了半导体CuIn_xGa_(1-x)Se_2纳米晶体(20-30 nm)。取决于合成条件,纳米晶体表现出具有窄尺寸分布的立方或球形形态。带隙随Ga浓度的增加而增加,其值接近整体中观察到的值。

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