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首页> 外文期刊>Solar Energy Materials and Solar Cells: An International Journal Devoted to Photovoltaic, Photothermal, and Photochemical Solar Energy Conversion >Electrical and optical properties of highly conducting CdO : F thin film deposited by sol-gel dip coating technique
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Electrical and optical properties of highly conducting CdO : F thin film deposited by sol-gel dip coating technique

机译:溶胶-凝胶浸涂技术沉积高导电CdO:F薄膜的电学和光学性质

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Highly conducting fluorine-doped cadmium oxide (CdO:F) thin films were deposited by sol-gel dip coating technique on glass and Si substrates. F concentration in the films was varied from 2.0% to 13.8% as determined from energy dispersive X-ray analysis. X-ray diffraction pattern showed that the films were polycrystalline in nature. The optimum F concentration for obtaining maximum conductivity was found to be similar to9.7%. The corresponding electrical conductivity was found to be similar to 1.088 X 10(4) S/cm and mobility similar to 60.41 V/cm(2). Analysis of UV-VIS-NIR spectrum of the film with F concentration similar to9.7% showed a direct band gap energy of 2.3 eV. (C) 2003 Elsevier B.V. All rights reserved.
机译:通过溶胶-凝胶浸涂技术在玻璃和Si衬底上沉积高导电的掺氟氧化镉(CdO:F)薄膜。通过能量色散X射线分析确定,膜中的F浓度在2.0%至13.8%之间变化。 X射线衍射图表明该膜本质上是多晶的。发现获得最大电导率的最佳F浓度接近9.7%。发现相应的电导率类似于1.088 X 10(4)S / cm,迁移率类似于60.41 V / cm(2)。 F浓度接近9.7%的薄膜的UV-VIS-NIR光谱分析显示,直接带隙能为2.3 eV。 (C)2003 Elsevier B.V.保留所有权利。

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