Transient photoconductance and photoluminescence from thick silicon wafers and bricks: Analytical solutions

摘要

Silicon solar cell technology is evolving rapidly with recent improvements in both multicrystalline and monocrystalline silicon wafers and ingots prepared by high throughput directional solidification, using both semiconductor grade and upgraded metallurgical grade silicon. Photoconductance and photoluminescence measurements are being rapidly developed to guide the development of these materials, with increasing attention being paid to combining steady-state and transient photoluminescence measurements to obtain self-consistent results. Analytical transient solutions are presented for both photoconductance and photoluminescence from silicon bricks or thick wafers which will guide this development by highlighting important interdependencies.