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首页> 外文期刊>Solar Energy Materials and Solar Cells: An International Journal Devoted to Photovoltaic, Photothermal, and Photochemical Solar Energy Conversion >Electrodeposition of tin selenide thin film semiconductor: effect of the electrolytes concentration on the film properties
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Electrodeposition of tin selenide thin film semiconductor: effect of the electrolytes concentration on the film properties

机译:硒化锡薄膜半导体的电沉积:电解质浓度对薄膜性能的影响

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Tin selenide semiconductor films have been potentiostatically deposited onto a tin substrate from an aqueous solution containing SnCl2 and Na2SeO3. Deposition at various concentrations was attempted in order to investigate the effect of the electrolytes concentration on the film properties and to determine the optimum bath composition. The structure, morphology and photoactivity of the films were studied using X-ray diffraction, scanning electron microscopy and linear sweep photovoltammetry techniques. The semiconducting property of the deposit is strongly affected by the electrolytes concentration. The optimum bath composition was found to be 0.010M for SnCl2 and 0.015M for Na2SeO3. (C) 2002 Elsevier Science B.V. All rights reserved. [References: 11]
机译:硒化锡半导体膜已经从含有SnCl2和Na2SeO3的水溶液恒电位沉积到锡基板上。为了研究电解质浓度对膜性能的影响并确定最佳浴组成,尝试了各种浓度的沉积。使用X射线衍射,扫描电子显微镜和线性扫描光电伏安法研究了薄膜的结构,形态和光活性。沉积物的半导体性质受电解质浓度的强烈影响。发现最佳浴组成对于SnCl 2是0.010M,对于Na 2 SeO 3是0.015M。 (C)2002 Elsevier Science B.V.保留所有权利。 [参考:11]

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