Fabrication of flexible MoS_2 thin-film transistor arrays for practical gas-sensing applications

摘要

By combining two kinds of solution-processable two-dimensional materials, a flexible transistor array is fabricated in which MoS 2 thin film is used as the active channel and reduced graphene oxide (rGO) film is used as the drain and source electrodes. The simple device configuration and the 1.5 mm-long MoS 2 channel ensure highly reproducible device fabrication and operation. This flexible transistor array can be used as a highly sensitive gas sensor with excellent reproducibility. Compared to using rGO thin film as the active channel, this new gas sensor exhibits much higher sensitivity. Moreover, functionalization of the MoS 2 thin film with Pt nanoparticles further increases the sensitivity by up to ～3 times. The successful incorporation of a MoS 2 thin-film into the electronic sensor promises its potential application in various electronic devices. By combining two kinds of solution-processable 2D materials, a flexible transistor array is fabricated in which a MoS 2 thin film is used as the active channel and a reduced graphene oxide (rGO) film is used as the drain and source electrodes. This flexible transistor array can be used as a highly sensitive gas sensor with excellent reproducibility. Compared to using rGO thin film as the active channel, this new gas sensor exhibits much higher sensitivity. Moreover, functionalization of the MoS 2 thin film with Pt nanoparticles further increases the sensitivity by up to ～3 times.