P-211L: Late-News Poster Surface Controlled Coatable Gate Dielectric and Electrical Characteristics

Yukie Isogai; Takeyoshi Katoh; Koichi Sugitani; Masahiro Hanmura; Mitsushi Tada; Yoshiki Nakajima; Yoshihide Fujisaki; Toshihiro Yamamoto

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P-211L: Late-News Poster Surface Controlled Coatable Gate Dielectric and Electrical Characteristics

机译：P-211L：最新新闻海报表面控制的可涂覆栅极介电和电气特性

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We have developed Coatable Gate Dielectrics (CGDE) which can be cured at low temperature. It is applicable to not only glass but also flexible substrate with low Tg. By optimizing surface states, we achieved stable electrical characteristics of organic thin-film transistor (OTFT) with CGDE.

机译：我们已经开发了可在低温下固化的可涂覆栅极电介质（CGDE）。它不仅适用于玻璃，而且适用于低Tg的柔性基板。通过优化表面状态，我们使用CGDE实现了有机薄膜晶体管（OTFT）的稳定电特性。

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《SID International Symposium: Digest of Technology Papers》 |2011年第3期|共3页
作者
Yukie Isogai; Takeyoshi Katoh; Koichi Sugitani; Masahiro Hanmura; Mitsushi Tada; Yoshiki Nakajima; Yoshihide Fujisaki; Toshihiro Yamamoto;
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1. P-211L: Late-News Poster Surface Controlled Coatable Gate Dielectric and Electrical Characteristics [J] . Yukie Isogai, Takeyoshi Katoh, Koichi Sugitani, SID International Symposium: Digest of Technology Papers . 2011,第3期

机译：P-211L：最新新闻海报表面控制的可涂覆栅极介电和电气特性
2. Influence of Gate Dielectric and Its Surface Treatment on Electrical Characteristics of Solution-Processed ZnO Transistors [J] . Song Dong-Seok, Kim Jae-Hyun, Jung Ji-Hoon, Journal of nanoscience and nanotechnology . 2016,第2期

机译：栅介电及其表面处理对固溶ZnO晶体管电学特性的影响
3. Structure and electrical characteristics of AlGaN/GaN MISHFET with A1_2O_3 thin film as both surface passivation and gate dielectric [J] . Benlang Tian, Chao Chen, Jihua Zhang, Semiconductor science and technology . 2011,第8期

机译：以A1_2O_3薄膜为表面钝化层和栅极电介质的AlGaN / GaN MISHFET的结构和电学特性
4. Late-News Poster: Surface Controlled Coatable Gate Dielectric and Electrical Characteristics [C] . Yukie Isogai, Takeyoshi Katoh, Koichi Sugitani, Annual SID symposium, seminar, and exhibition;Display Week 2011 . 2012

机译：最新消息海报：表面控制的可涂覆栅极介电和电气特性
5. Electrical and material characteristics of hafnium-based multi-metal high-k gate dielectrics for future scaled CMOS technology: Physics, reliability, and process development. [D] . Rhee, Se Jong. 2005

机译：基于future的多金属高k栅极电介质的电气和材料特性，可用于未来的规模化CMOS技术：物理，可靠性和工艺开发。
6. Structural and electrical characteristics of high-κ Er2O3 and Er2TiO5 gate dielectrics for a-IGZO thin-film transistors [O] . Fa-Hsyang Chen, Jim-Long Her, Yu-Hsuan Shao, 2013

机译：用于a-IGZO薄膜晶体管的高κEr2O3和Er2TiO5栅极电介质的结构和电气特性
7. Electrical and mechanical characteristics of surface AC dielectric barrier discharge plasma actuators applied to airflow control [O] . 2014

机译：适用于气流控制的表面交流电介质阻挡放电等离子体致动器的电气和机械特性

P-211L: Late-News Poster Surface Controlled Coatable Gate Dielectric and Electrical Characteristics

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