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Photosensitive structures on single crystals of MnIn_2S_4: Preparation and properties

机译:MnIn_2S_4单晶上的光敏结构:制备与性能

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Uniform single crystals of a ternary compound MnIn_2S_4 have been grown by the method of directional crystallization of an almost stoichiometric melt. The problem of the creation of photosensitive structures has been solved and the first studies of the spectra of photosensitivity have been performed, which made it possible to draw a conclusion on the nature of interband optical transitions in this semiconductor and to estimate the width of the energy gap for the direct and indirect transitions. The possibility of the application of the new structures in wideband photoconverters of optical radiation is noted.
机译:三元化合物MnIn_2S_4的均匀单晶已经通过几乎化学计量的熔体的定向结晶方法生长。解决了创建光敏结构的问题,并进行了光敏光谱的首次研究,这使得可以对这种半导体中的带间光跃迁的性质作出结论,并估计能量的宽度直接和间接过渡的差距。指出了将新结构应用于光辐射的宽带光电转换器的可能性。

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