Comparative analysis of limiting photoconversion efficiency of usual solar cells and solar cells with quantum wells

摘要

An analytical approach to calculation of limiting photoconversion efficiency eta in solar cells with quantum wells is suggested and the value of eta is compared with the limiting photoconversion efficiency of usual solar cells. In the described approach, along with bulk recombination, surface recombination at the barrier semiconductor-quantum well interfaces is taken into account. Features of formation of open-circuit voltage in Si-based p-i-n structures with long lifetimes of nonequilibrium charge carriers and in GaAs-based structures with short lifetimes of nonequilibrium carriers are compared.